However, with the use of this skill, there are problems such as touch problems at said electrical joints due to poor step coverage of the metal, for example. Therefore, it is necessary to make electrical connections with a large cross-sectional area. In order to obtain a large capacitance value, it is necessary for the capacitor to have a large area or a very small dielectric thickness. In the first case, there is the problem of deformation due to mechanical stress, and in the second case, the capacitor becomes unreliable because of the risk of breakdown.

The present invention is intended to provide a small and reliable capacitor, using a conventional data capacitor medium, such as silicon oxide or silicon nitride, which will have high performance and can be used in integrated circuits, especially in high frequency applications such as the radio frequency category.